Separate the die from the insulating substrate
A SiC MOSFET may be mounted on a copper/Si₃N₄/copper or copper/AlN/copper substrate. The die material and circuit-carrier material solve different problems. Keep separate fields for semiconductor technology and substrate construction in the RFQ.
Do not assume electrical insulation
SiC electrical resistivity depends on grade and processing. Manufacturer offerings include different resistivity levels. A thermally conductive SiC component cannot be substituted for an insulating ceramic without checking isolation, leakage and the actual part specification.
Use a requirements-based comparison
For a power-module carrier, review dielectric isolation, mechanical reliability, thermal resistance and metallization availability. For a semiconductor-processing component, purity, chemical compatibility and dimensional stability may dominate instead. These are different procurement categories despite sharing a material name.
Engineering example
An RFQ for a “SiC substrate” could mean a semiconductor wafer or an insulating carrier beneath a SiC die. Add a cross-section and material labels so suppliers quote the intended component.
Before you release the design
- Label die, carrier and heat spreader separately.
- Verify electrical resistivity for the exact grade.
- Specify the insulation function explicitly.
Sources and further technical reading
Manufacturer references support the material and process context. Worked examples and checklists are engineering guidance; they are not test results or supplier guarantees.